| PART |
Description |
Maker |
| TZ150N22KOF TZ150N18KOF TZ150N24KOF TZ150N26KOC |
High junction temperature Transil 晶闸管模块|可控硅| 2.2KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 1.8KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 2.4KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 2.6KV五（无线资源管理）| 223A我（翻译
|
Infineon Technologies AG
|
| SSBD1045G |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD10L100CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD5L150A |
High Junction Temperature
|
Silikron Semiconductor Co.,...
|
| SMA6J6.0A-TR SMA6J6.0CA-TR SMA6J6.5A-TR SMA6J6.5CA |
High junction temperature Transil
|
ST Microelectronics
|
| SMA6F12AVCL SMA6F13A |
High junction temperature Transil
|
STMicroelectronics
|
| STPS20SM80C |
High junction temperature capability
|
STMicroelectronics
|
| SMA6J |
High Junction Temperature Transil
|
ST Microelectronics
|
| SMA6J-85ATR SMA6J-85CATR SMA6J33A-TR STMICROELECTR |
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
High junction temperature Transil
|
STMicroelectronics
|
| BCR30AM-12LB BCR30AM-12LB-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150隆?C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
| BCR16CS-12LB BCR16CS-12LB-T11 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150掳C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
